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IRFD120 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
IRFD120 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
IRFD120 Datasheet PDF : IRFD120 pdf   
IRFD120 image

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.
Formerly developmental type TA17401.

• 1.3A, 100V
• rDS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”


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