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IRF9520 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
IRF9520
Fairchild
Fairchild Semiconductor Fairchild
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IRF9520 Datasheet PDF : IRF9520 pdf     
IRF9520 image

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17501.

Features
• 6A, 100V
• rDS(ON)= 0.600Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

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