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IRF9510 Datasheet PDF - Intersil

Part Name
Description
MFG CO.
Other PDF
  no available.
PDF
IRF9510 Datasheet PDF : IRF9510 pdf     
IRF9510 image

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 3.0A, 100V
• rDS(ON) = 1.200Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Page Link's: 1  2  3  4  5  6  7 
 

Part Name
Description
PDF
MFG CO.
0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET
Fairchild Semiconductor
1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
New Jersey Semiconductor
12A, 100V, 0.200 Ohm, N-Channel Power MOSFET
Harris Semiconductor
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
New Jersey Semiconductor
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
New Jersey Semiconductor
6A, 100V, 0.600 Ohm, P-Channel Power MOSFET
Fairchild Semiconductor
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
Harris Semiconductor
1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET
Fairchild Semiconductor
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
Fairchild Semiconductor
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
Fairchild Semiconductor

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