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IRF9150 Datasheet PDF - New Jersey Semiconductor

Part NameDescriptionManufacturer
IRF9150 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET NJSEMI
New Jersey Semiconductor NJSEMI
Other PDF  no available.
IRF9150 Datasheet PDF : IRF9150 pdf   
IRF9150 image

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

• -25A, -100V
• rDS(ON) = 0.150Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

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