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HYB5117805BJ-50 Datasheet PDF - Infineon Technologies

Part NameDescriptionManufacturer
HYB5117805BJ-50 2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO) Infineon
Infineon Technologies Infineon
Other PDF  no available.
HYB5117805BJ-50 Datasheet PDF : HYB5117805BJ-50 pdf   
HYB5117805BJ-50 image

The HYB 5117805BSJ is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB 5117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user.

Advanced Information
• 2 097 152 words by 8-bit organization
• 0 to 70 °C operating temperature
• Performance:
• Single + 5 V (± 10 %) supply
• Low power dissipation
    max. 660 mW active (-50 version)
    max. 605 mW active (-60 version)
    max. 550 mW active (-70 version)
    11 mW standby (TTL)
5.5. mW standby (MOS)
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh and test mode
• Hyper page mode (EDO) capability
• All inputs, outputs and clocks fully TTL-compatible
• 2048 refresh cycles / 32 ms (2k-Refresh)
• Plastic Package: P-SOJ-28-3 400 mil

 

Other manufacturer searches related to HYB5117805BJ-50

Part NameDescriptionPDFManufacturer
HYB3117805 2M × 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO) HYB3117805 View Siemens AG
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HYB5117805BJ-50 2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO) HYB5117805BJ-50 View Siemens AG
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HYB5116405BJ-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Hyper Page Mode- EDO) HYB5116405BJ-50 View Siemens AG
HYB3116400 4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode) HYB3116400 View Siemens AG
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