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HUFA76413DK8T_F085 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
HUFA76413DK8T_F085 N-Channel Logic Level UltraFET® Power MOSFET Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
HUFA76413DK8T_F085 Datasheet PDF : HUFA76413DK8T_F085 pdf   
HUFA76413DK8T_F085 image

General Description
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Features
• 150°C Maximum Junction Temperature
• UIS Capability (Single Pulse and Repetitive Pulse)
• Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V
• Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V
• Qualified to AEC Q101
• RoHS Compliant

Applications
• Motor and Load Control
• Powertrain Management

 

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