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HUF75309D3 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
Other PDF
  no available.
PDF
HUF75309D3 Datasheet PDF : HUF75309D3 pdf     
HUF75309P3 image

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

Features
• 19A, 55V
• Simulation Models
    - Temperature Compensated PSPICE® and SABER™ Models
    - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
    - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

 

Part Name
Description
PDF
MFG CO.
19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs
Intersil
3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET
Intersil
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
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20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs
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35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs
Intersil
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs
Intersil
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs
Intersil
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
Intersil
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
Intersil
66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs
Intersil

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