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GS8161E18BD-150IV Datasheet PDF - Giga Semiconductor

Part NameDescriptionManufacturer
GS8161E18BD-150IV 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs GSI
Giga Semiconductor GSI
Other PDF  no available.
GS8161E18BD-150IV Datasheet PDF : GS8161E18BD-150IV pdf   
GS8161E18BT-V image

Functional Description
Applications
The GS8161ExxB(T/D)-xxxV is a 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features
• FT pin for user-configurable flow through or pipeline operation
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP and 165 BGA packages
• RoHS-compliant 100-lead TQFP and 165 BGA packages available

 

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