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GS8160V18CGT-250 Datasheet PDF - Giga Semiconductor

Part NameDescriptionManufacturer
GS8160V18CGT-250 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs GSI
Giga Semiconductor GSI
Other PDF  no available.
GS8160V18CGT-250 Datasheet PDF : GS8160V18CGT-250 pdf   
GS8160V18CT image

Functional Description
Applications
The GS8160V18/36CT is an 18,874,368-bit (16,777,216-bit for x32 version) high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.

Features
• FT pin for user-configurable flow through or pipeline operation
• Single Cycle Deselect (SCD) operation
• 1.8 V +10%/–10% core power supply
• 1.8 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 100-lead TQFP package
• Pb-Free 100-lead TQFP package available

 

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