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FQP55N06 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQP55N06
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  no available.
PDF
FQP55N06 Datasheet PDF : FQP55N06 pdf     
FQP55N06 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

Features
• 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 85 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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