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FQP50N06L Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQP50N06L N-Channel QFET MOSFET 60 V, 52.4 A, 21 mΩ Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
FQP50N06L Datasheet PDF : FQP50N06L pdf   
FQP50N06L image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features
• 52.4 A, 60 V, Rds(on)= 21 mΩ(Max.) @ Vgs= 10V Id= 26.2 A
• Low Gate Charge (Typ. 24.5 nC)
• Low Crss (Typ. 90 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

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