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FQD2N60CTM Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQD2N60CTM
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
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PDF
FQD2N60CTM Datasheet PDF : FQD2N60CTM pdf     
FQD2N60C image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• RoHS Compliant

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