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FQAF9N90 Datasheet PDF - Fairchild Semiconductor

Part NameDescriptionManufacturer
FQAF9N90 900V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
Other PDF  no available.
FQAF9N90 Datasheet PDF : FQAF9N90 pdf   
FQAF9N90 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
• 5.9A, 900V, RDS(on)= 1.3Ω@VGS= 10 V
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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