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FQAF22P10 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQAF22P10
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  no available.
PDF
FQAF22P10 Datasheet PDF : FQAF22P10 pdf     
FQAF22P10 image

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features
• -16.6A, -100V, RDS(on) = 0.125Ω @VGS = -10 V
• Low gate charge ( typically 40 nC)
• Low Crss ( typically 160 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

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