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FQA70N10 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQA70N10
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  no available.
PDF
FQA70N10 Datasheet PDF : FQA70N10 pdf     
FQA70N10 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Features
• 70A, 100V, RDS(on) = 0.023Ω @VGS = 10 V
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 150 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

 

Part Name
Description
PDF
MFG CO.
100V N-Channel MOSFET
Unspecified
100V N-Channel MOSFET
Unspecified
100V N-Channel MOSFET
Unspecified
100V N-Channel MOSFET
Unspecified
100V N-Channel MOSFET
Unspecified
100V N-Channel MOSFET
Silikron Semiconductor Co.,LTD.
100V N-Channel MOSFET
Silikron Semiconductor Co.,LTD.
100V Dual N-Channel MOSFET
Unspecified
100V N-Channel MOSFET
GOOD-ARK
100V N-Channel MOSFET
Unspecified

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