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FDT457N Datasheet PDF - Fairchild Semiconductor

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FDT457N Datasheet PDF : FDT457N pdf     
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.

■ 5 A, 30 V. RDS(ON) = 0.06 W @ VGS = 10 V
                  RDS(ON) = 0.090 W @ VGS = 4.5 V.
■ High density cell design for extremely low RDS(ON).
■ High power and current handling capability in a widely used surface mount package.


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