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FDS6894AZ Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
Other PDF
  no available.
PDF
FDS6894AZ Datasheet PDF : FDS6894AZ pdf     
FDS6894AZ image

General Description
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features
• 8 A, 20 V. RDS(ON) = 17 mW @ VGS = 4.5 V RDS(ON) = 20 mW @ VGS = 2.5 V RDS(ON) = 30 mW @ VGS = 1.8 V
• Low gate charge (14 nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

 

Part Name
Description
PDF
MFG CO.
N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
Vishay Semiconductors
Dual P-Channel/ Logic Level/ PowerTrenchTM MOSFET
Microsemi Corporation
2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET™ Power MOSFET
Intersil
5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET
Intersil
3.5A, 12V, 0.050 Ohm, Logic Level, Dual N-Channel LittleFET™ Power MOSFET
Intersil
3.5A, 30V, 0.06 Ohm, Logic Level, Dual N-Channel LittleFET™ Power MOSFET
Intersil
5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
Intersil
6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
Intersil
3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET
Intersil
P - Channel Logic Level MOSFET
Unspecified

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