This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
· 48 A, 30 V RDS(ON) = 12 mW @ VGS = 10 V
RDS(ON) = 14 mW @ VGS = 4.5 V
· Critical DC electrical parameters specified at elevated temperature
· High performance trench technology for extremely low RDS(ON)
· 175°C maximum junction temperature rating