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BS616UV2021 Datasheet PDF - Brilliance Semiconductor

Part NameDescriptionManufacturer
BS616UV2021 Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BSI
Brilliance Semiconductor BSI
Other PDF  no available.
BS616UV2021 Datasheet PDF : BS616UV2021 pdf   
BS616UV2021DC10 image

The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide range of 1.8V to 3.6V supply voltage.

• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
    Vcc = 2.0V
        C-grade: 15mA (Max.) operating current
        I-grade: 20mA (Max.) operating current
        0.08uA (Typ.) CMOS standby current
    Vcc = 3.0V
        C-grade: 20mA (Max.) operating current
        I-grade: 25mA (Max.) operating current
        0.1uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max.) at Vcc = 2.0V
    -10 100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin


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