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BS616UV1010CI Datasheet PDF - Brilliance Semiconductor

Part NameDescriptionManufacturer
BS616UV1010CI Ultra Low Power/Voltage CMOS SRAM 64K X 16 bit BSI
Brilliance Semiconductor BSI
Other PDF  no available.
BS616UV1010CI Datasheet PDF : BS616UV1010CI pdf   
BS616UV1010AC image

The BS616UV1010 is a high performance, ultra low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.

• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
    Vcc = 2.0V C-grade : 10mA (Max.) operating current
                       I- grade : 15mA (Max.) operating current
                       0.01uA (Typ.) CMOS standby current
    Vcc = 3.0V C-grade : 15mA (Max.) operating current
                       I- grade : 20mA (Max.) operating current
                       0.02uA (Typ.) CMOS standby current
• High speed access time :
    -15 150ns (Max.) at Vcc = 3.0V
• Input levels are CMOS-compatible
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin


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